Qonda umahluko phakathi kwamabanga ahlukeneyo e-SSD Chips ye-NAND Flash SLC, MLC, TLC, QLC

Igama elipheleleyo le-NAND Flash yiMemori yokuKhanya, eyesixhobo sememori esingaguquguqukiyo (IsiXhobo seMemori esingaguqukiyo).Isekwe kuyilo lwesango elidadayo lwetransistor, kwaye iintlawulo zifakwe kwisango elidadayo.Ekubeni isango elidadayo libekwe lodwa ngombane, ngoko ke ii-Elektroni ezifika esangweni zivaleleke nasemva kokuba umbane ususiwe.Le yingqiqo ye-flash non-volatility.Idatha igcinwe kwizixhobo ezinjalo kwaye ayiyi kulahleka nokuba umbane ucinyiwe.
Ngokwe-nanotechnology eyahlukeneyo, i-NAND Flash ifumene utshintsho ukusuka kwi-SLC ukuya kwi-MLC, kwaye emva koko ukuya kwi-TLC, kwaye isiya ngakwi-QLC.I-NAND Flash isetyenziswa kakhulu kwi-eMMC / eMCP, i-U disk, i-SSD, i-automobile, i-Intanethi yezinto kunye nezinye iinkalo ngenxa yomthamo wayo omkhulu kunye nesantya sokubhala ngokukhawuleza.

I-SLC (igama elipheleleyo lesiNgesi (i-Single-Level Cell - SLC) yindawo yokugcina inqanaba elinye
Uphawu lobuchwepheshe be-SLC kukuba ifilimu ye-oxide phakathi kwesango elidadayo kunye nomthombo uncinci.Xa ubhala idatha, intlawulo egciniweyo inokupheliswa ngokufaka i-voltage kwintlawulo yesango elidadayo kwaye emva koko idlule kumthombo., oko kukuthi, iinguqu ezimbini kuphela ze-voltage ye-0 kunye ne-1 inokugcina iyunithi yolwazi lwe-1, oko kukuthi, i-bit / cell cell, ebonakaliswe ngokukhawuleza, ubomi obude kunye nokusebenza okunamandla.Ukungalungi kukuba umthamo uphantsi kwaye ixabiso liphezulu.

I-MLC (igama lesiNgesi elipheleleyo le-Multi-Level Cell - MLC) yindawo yokugcina i-multi-layer
I-Intel (Intel) iphuhlise ngempumelelo i-MLC kuqala ngoSeptemba 1997. Umsebenzi wayo kukugcina iiyunithi ezimbini zolwazi kwiSango elidadayo (indawo apho intlawulo igcinwa kwiseli yememori ye-flash), kwaye emva koko isebenzise intlawulo yamandla ahlukeneyo (iNqanaba ), Ukufunda nokubhala ngokuchanekileyo ngokusebenzisa ulawulo lombane olugcinwe kwimemori.
Oko kukuthi, i-2bit / iseli, iyunithi nganye yeseli igcina ulwazi lwe-2bit, ifuna ulawulo lombane oluntsonkothileyo, kukho utshintsho olune lwe-00, 01, 10, 11, isantya siqhelekileyo, ubomi buphakathi, ixabiso liphakathi, malunga I-3000-10000 amaxesha okucima kunye nokubhala ubomi. I-MLC isebenza ngokusebenzisa inani elikhulu lebakala lombane, iseli nganye igcina amasuntswana amabini edatha, kwaye ubuninzi bedatha bukhulu kakhulu, kwaye inokugcina ixabiso elingaphezulu kwe-4 ngexesha.Ke ngoko, uyilo lwe-MLC lunokuba noxinzelelo olungcono lokugcina.

I-TLC (igama lesiNgesi elipheleleyo leTrinary-Level Cell) yindawo yokugcina enemigangatho emithathu
I-TLC yi-3bit kwiseli nganye.Iyunithi nganye yeseli igcina ulwazi lwe-3bit, olunokugcina i-1/2 yedatha ngaphezu kwe-MLC.Kukho iintlobo ezisi-8 zokutshintsha kwamandla ombane ukusuka kwi-000 ukuya ku-001, oko kukuthi, i-3bit/cell.Kukwakho nabavelisi beFlash ababizwa ngokuba yi8LC.Ixesha elifunekayo lokufikelela ixesha elide, ngoko ke isantya sokudlulisa siyacotha.
Inzuzo ye-TLC kukuba ixabiso liphantsi, ixabiso lokuvelisa nge-megabyte liphantsi, kwaye ixabiso liphantsi, kodwa ubomi bufutshane, kuphela malunga ne-1000-3000 yokucima kunye nokubhala kwakhona ubomi, kodwa i-TLC ivavanyiwe kakhulu amaqhekeza e-SSD. zisetyenziswe ngokwesiqhelo ngaphezu kweminyaka emi-5.

I-QLC (igama lesiNgesi elipheleleyo le-Quadruple-Level Cell) iyunithi yokugcina enemigangatho emine
I-QLC inokubizwa ngokuba yi-4bit MLC, iyunithi yokugcina imigangatho emine, oko kukuthi, i-4bits / iseli.Kukho utshintsho lwe-16 kwi-voltage, kodwa umthamo unokunyuswa nge-33%, oko kukuthi, ukusebenza kokubhala kunye nobomi bokucima kuya kuncitshiswa ngakumbi xa kuthelekiswa ne-TLC.Kuvavanyo oluthile lokusebenza, iMagnesium yenze imifuniselo.Ngokumalunga nesantya sokufunda, zombini i-SATA interfaces inokufikelela kwi-540MB/S.I-QLC yenza okubi kakhulu kwisantya sokubhala, kuba ixesha layo leprogram ye-P / E lide kune-MLC kunye ne-TLC, isantya sihamba ngokukhawuleza, kwaye isantya sokubhala esiqhubekayo sisuka kwi-520MB / s ukuya kwi-360MB / s, ukusebenza okungahleliwe kwehle ukusuka kwi-9500 IOPS ukuya kwi-5000. IOPS, ilahleko ephantse ibe sisiqingatha.

I-PS: Idatha eninzi egcinwe kwiyunithi nganye yeSeli, iphezulu umthamo wendawo nganye, kodwa kwangaxeshanye, ikhokelela ekunyukeni kwamanqanaba ombane ahlukeneyo, okunzima ukuyilawula, ngoko ukuzinza kweNAND Flash chip. iba yimbi ngakumbi, kwaye ubomi benkonzo buba bufutshane, nganye ineenzuzo zayo kunye nokungonakali.

(I-NAND Flash yokufunda nokubhala ubomi buyireferensi kuphela)
Akunzima ukubona ukuba ukusebenza kweentlobo ezine zememori ye-NAND flash yahlukile.Iindleko zeyunithi nganye ye-SLC iphezulu kunezinye iindidi ze-NAND flash memory particles, kodwa ixesha lokugcinwa kwedatha lide kwaye isantya sokufunda sikhawuleza;I-QLC inomthamo omkhulu kunye neendleko eziphantsi, kodwa ngenxa yokuthembeka kwayo okuphantsi kunye nokuphila ixesha elide Iintsilelo kunye nezinye iintsilelo zisafuna ukuphuhliswa ngakumbi.

Ngokombono weendleko zemveliso, ukufunda nokubhala isantya kunye nobomi benkonzo, ukuhlelwa kwezi ndidi zine zezi:
SLC>MLC>TLC>QLC;
Izisombululo eziphambili zangoku yi-MLC kunye ne-TLC.I-SLC ijolise ikakhulu kumkhosi kunye nezicelo zeshishini, ngokubhala ngesantya esiphezulu, izinga lempazamo eliphantsi, kunye nokuqina ixesha elide.I-MLC ijolise ikakhulu kwizicelo zodidi lwabathengi, umthamo wayo uphezulu ngokuphindwe kabini kune-SLC, ixabiso eliphantsi, lilungele i-USB flash drives, iiselfowuni, iikhamera zedijithali kunye namanye amakhadi ememori, kwaye isetyenziswa ngokubanzi kwi-SSD yomthengi namhlanje. .

Imemori ye-NAND flash inokohlulwa ibe ngamacandelo amabini: Isakhiwo se-2D kunye nesakhiwo se-3D ngokwezakhiwo ezahlukeneyo zendawo.Iitransistors zesango ezidadayo zisetyenziswa ikakhulu kwi-2D FLASH, ngelixa i-3D flash isebenzisa ikakhulu i-CT transistors kunye nesango elidadayo.Ngaba i-semiconductor, i-CT yi-insulator, ezi zimbini zihluke kwindalo kunye nomgaqo.Umahluko ngulo:

Ubume be-2D ye-NAND Flash
Ulwakhiwo lwe-2D lweeseli zememori lucwangciswe kuphela kwinqwelomoya ye-XY yetshiphu, ngoko ke ekuphela kwendlela yokufumana ingxinano ephezulu kwi-wafer efanayo usebenzisa itekhnoloji yokukhanya kwe-2D kukucutha inkqubo yenkqubo.
Icala elisezantsi kukuba iimpazamo kwi-NAND flash zixhaphakile kwiindawo ezincinci;ukongeza, kukho umda kwi-node encinci yenkqubo enokusetyenziswa, kwaye ubuninzi bokugcina abukho phezulu.

Ubume be-3D ye-NAND Flash
Ukwandisa ubuninzi bokugcina, abavelisi baphuhlise iteknoloji ye-3D NAND okanye i-V-NAND (i-NAND ethe nkqo), ebeka iiseli zememori kwi-Z-plane kwi-wafer efanayo.

Kwi-3D NAND flash, iiseli zememori ziqhagamshelwe njengeentambo ezithe nkqo kuneentambo ezithe tye kwi-2D NAND, kwaye ukwakha ngale ndlela kunceda ukufezekisa ukuxinana okuphezulu kwendawo ye-chip efanayo.Iimveliso zokuqala ze-3D Flash zinemigangatho engama-24.