Inkqubo yokwenziwa kweNand Flash
I-NAND Flash icutshungulwa ukusuka kwi-silicon, kwaye imathiriyeli yesilicon icutshungulwa ibe zii-wafers, ezizohlulwe ngokubanzi zibe zii-intshi ezi-6, ii-intshi ezisi-8, kunye ne-12 intshi.I-wafer enye iveliswa ngokusekwe kwesi siqwengana siphela.Ewe, zingaphi iwafer enye enokusikwa kwi-wafer imiselwa ngokobungakanani befayizi, ubungakanani bewafer kunye nesantya sesivuno.Ngokwesiqhelo, amakhulu eetshiphusi ze-NAND FLASH zinokwenziwa kwiwafa enye.
I-wafer enye ngaphambi kokupakishwa iba yi-Die, isiqwenga esincinci esisikwe kwi-Wafer ngelaser.I-Die nganye yi-chip esebenzayo ezimeleyo, equlunqwe ngeesekethe ezingenakubalwa ze-transistor, kodwa inokupakishwa njengeyunithi ekupheleni Iba yi-flash particle chip.Isetyenziswa kakhulu kwiindawo zombane zabathengi ezifana ne-SSD, i-USB flash drive, imemori khadi, njl.
I-wafer equlethe i-NAND Flash wafer, i-wafer ivavanywa kuqala, kwaye emva kokuba uvavanyo lugqithisiwe, luyasikwa kwaye luvavanywe kwakhona emva kokusikwa, kwaye ukufa okungaguqukiyo, okuzinzileyo, kunye nomthamo ogcweleyo kuyasuswa, kwaye emva koko kupakishwe.Uvavanyo luya kuqhutywa kwakhona ukuze lufakele amasuntswana eNand Flash abonwa yonke imihla.
Ukuphumla kwi-wafer mhlawumbi ayizinzanga, yonakaliswe ngokuyinxenye kwaye ngenxa yoko akwanelanga umthamo, okanye yonakaliswe ngokupheleleyo.Uthathela ingqalelo isiqinisekiso somgangatho, umzi-mveliso wokuqala uya kubhengeza ukuba le nto ifile, nto leyo echazwa ngokungqongqo njengokulahlwa kwayo yonke inkunkuma.
Umzi-mveliso wokupakisha ofanelekileyo weFlash Die uya kupakishwa kwi-EMMC, TSOP, BGA, LGA kunye nezinye iimveliso ngokweemfuno, kodwa kukwakho iziphene ekupakishweni, okanye ukusebenza akukho kumgangatho, la masuntswana eFlash aya kuhluzwa kwakhona, kwaye iimveliso ziya kuqinisekiswa ngovavanyo olungqongqo.umgangatho.
Abavelisi bememori ye-Flash memory bamelwe ikakhulu ngabavelisi abaliqela abanje nge-Samsung, i-SK Hynix, iMicron, i-Kioxia (eyayisakuba yiToshiba), i-Intel, kunye ne-Sandisk.
Phantsi kwemeko yangoku apho iNAND Flash yangaphandle ilawula imarike, umenzi weFlash waseTshayina (YMTC) uye wavela ngequbuliso ukuze athathe indawo emarikeni.I-128-layer 3D NAND yayo iya kuthumela i-128-layer 3D NAND iisampulu kumlawuli wokugcina kwikota yokuqala ye-2020. Abavelisi, abajonge ukungena kwimveliso yefilimu kunye nokuveliswa kobuninzi kwikota yesithathu, bacetywa ukuba basetyenziswe kwiimveliso ezahlukeneyo ze-terminal ezifana njenge-UFS kunye ne-SSD, kwaye iya kuthunyelwa kwiifektri zemodyuli ngaxeshanye, kubandakanywa neemveliso ze-TLC kunye ne-QLC, ukwandisa isiseko sabathengi.
Usetyenziso kunye nentsingiselo yophuhliso lweNAND Flash
Njengesixhobo sokugcina idrayivu esebenzayo, i-NAND Flash ineempawu ezithile zayo.Ubomi be-NAND Flash abulingani nobomi be-SSD.Ii-SSD zinokusebenzisa iindlela ezahlukeneyo zobugcisa ukuphucula ubomi be-SSD ngokubanzi.Ngeendlela ezahlukeneyo zobugcisa, ubomi be-SSD bunokunyuswa nge-20% ukuya kwi-2000% xa kuthelekiswa ne-NAND Flash.
Ngakolunye uhlangothi, ubomi be-SSD abulingani nobomi be-NAND Flash.Ubomi be-NAND Flash bubonakaliswa ikakhulu ngumjikelo weP/E.I-SSD yenziwe ngamasuntswana eFlash amaninzi.Ngokusebenzisa i-disk algorithm, ubomi beengqungquthela bunokusetyenziswa ngokufanelekileyo.
Ngokusekwe kumgaqo-siseko kunye nenkqubo yokwenziwa kwe-NAND Flash, bonke abavelisi abakhulu bememori ye-flash basebenza ngenkuthalo ekuphuhliseni iindlela ezahlukeneyo zokunciphisa ixabiso ngesuntswana lememori ye-flash, kwaye baphanda ngenkuthalo ukwandisa inani leeleya ezithe nkqo kwi-3D NAND Flash.
Ngophuhliso olukhawulezayo lwetekhnoloji ye-3D NAND, itekhnoloji ye-QLC iyaqhubeka nokuvuthwa, kwaye iimveliso ze-QLC ziqalise ukuvela enye emva kwenye.Kubonwa kwangaphambili ukuba i-QLC iza kuthatha indawo ye-TLC, njengokuba i-TLC ithatha indawo ye-MLC.Ngaphezu koko, ngokuphindaphindwa okuphindwe kabini kwe-3D NAND ye-single-die umthamo, oku kuya kuqhuba kwakhona ii-SSDs zabathengi ukuya kwi-4TB, i-SSD yezinga loshishino ukunyusela kwi-8TB, kwaye ii-QLC SSD ziya kugqiba imisebenzi eshiywe yi-TLC SSD kwaye ngokuthe ngcembe ithathe indawo ye-HDD.ichaphazela NAND Flash market.
Umda wezibalo zophando ziquka i-8 Gbit, i-4Gbit, i-2Gbit kunye nezinye i-SLC NAND imemori ye-flash engaphantsi kwe-16Gbit, kwaye iimveliso zisetyenziselwa umbane wabathengi, i-Intanethi yezinto, iimoto, i-industrial, unxibelelwano kunye namanye amashishini anxulumeneyo.
Abavelisi boqobo bamazwe ngamazwe bakhokela uphuhliso lwetekhnoloji ye-3D NAND.Kwimarike ye-NAND Flash, abavelisi abathandathu bokuqala abafana ne-Samsung, i-Kioxia (i-Toshiba), i-Micron, i-SK Hynix, i-SanDisk kunye ne-Intel kudala belawula ngaphezulu kwe-99% yesabelo semarike yehlabathi.
Ukongeza, iifektri zamazwe ngamazwe zoqobo ziyaqhubeka ukukhokela uphando kunye nophuhliso lwetekhnoloji ye-3D NAND, zenza imiqobo engqingqwa yobugcisa.Nangona kunjalo, iiyantlukwano kwiskimu soyilo lwefektri nganye yokuqala iya kuba nefuthe elithile kwimveliso yalo.Isamsung, iSK Hynix, iKioxia, kunye neSanDisk zikhuphe ngokulandelelana iimveliso zamva nje ze-100+ ze3D NAND.
Kwinqanaba langoku, uphuhliso lwentengiso ye-NAND Flash luqhutywa ikakhulu sisidingo see-smartphones kunye neetafile.Xa kuthelekiswa nemithombo yeendaba yogcino lwemveli efana noomatshini abanzima, amakhadi e-SD, iidrive eziqinileyo kunye nezinye izixhobo zokugcina ezisebenzisa iitshiphusi zeNAND Flash azinabume bomatshini, azinangxolo, ubomi obude, ukusetyenziswa kwamandla aphantsi, ukuthembeka okuphezulu, ubungakanani obuncinci, ukufunda ngokukhawuleza kwaye isantya sokubhala, kunye nobushushu bokusebenza.Inoluhlu olubanzi kwaye lukhokelo lophuhliso lokugcinwa komthamo omkhulu kwixesha elizayo.Ngokufika kwexesha ledatha enkulu, iNAND Flash chips iya kuphuhliswa kakhulu kwixesha elizayo.
Ixesha lokuposa: May-20-2022
